Characterisation of an RF-excited broad beam ion source with CHF3-O2 gas mixture In order to gain a detailed understanding of the etching process with an HF-excited broad beam ion source, studies to ...
Abstract: TaN was widely used as Cu diffusion barrier in CMOS Cu-BEOL technology, in which it was removed by CMP process. Some work was done on TaN etch by Br/Cl-based gas for metal gate application.
The Brazil Electronic Grade Trifluoromethane (CHF3) market is a specialized segment within the broader fluorochemicals industry, primarily serving the electronics manufacturing sector. This ...
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